Complementary Organic Logic Gates on Plastic Formed by Self-Aligned Transistors with Gravure and Inkjet Printed Dielectric and Semiconductors

Abstract

Complementary organic field-effect transistors, inverters, NAND and NOR logic on plastic are demonstrated using a combination of nanoimprint lithography, self-alignment, gravure, and inkjet printing. Sub-micrometer channel lengths, electrode overlaps and sub-100 nm dielectrics are compared to photolithographically patterned equivalents, as are inkjet and gravure printed semiconductors.