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Absorption threshold extended to 1.15eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells
| File | Description | Size | Format | |
|---|---|---|---|---|
 PIP-115eV-maintext.pdf | Accepted version | 985.59 kB | Adobe PDF | View/Open |
| Title: | Absorption threshold extended to 1.15eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells |
| Authors: | Toprasertpong, K Fujii, H Thomas, T Fuehrer, M Alonso-Alvarez, D Farrell, DJ Watanabe, K Okada, Y Ekins-Daukes, NJ Sugiyama, M Nakano, Y |
| Item Type: | Journal Article |
| Issue Date: | 20-Jan-2015 |
| Date of Acceptance: | 1-Dec-2014 |
| URI: | http://hdl.handle.net/10044/1/40315 |
| DOI: | https://dx.doi.org/10.1002/pip.2585 |
| ISSN: | 1099-159X |
| Publisher: | Wiley |
| Start Page: | 533 |
| End Page: | 542 |
| Journal / Book Title: | Progress in Photovoltaics |
| Volume: | 24 |
| Issue: | 4 |
| Copyright Statement: | This is the peer reviewed version of the following article: Toprasertpong, K., Fujii, H., Thomas, T., Führer, M., Alonso-Álvarez, D., Farrell, D. J., Watanabe, K., Okada, Y., Ekins-Daukes, N. J., Sugiyama, M., and Nakano, Y. (2016) Absorption threshold extended to 1.15 eV using InGaAs/GaAsP quantum wells for over-50%-efficient lattice-matched quad-junction solar cells. Prog. Photovolt: Res. Appl., 24: 533–542, which has been published in final form at https://dx.doi.org/10.1002/pip.2585. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving. |
| Sponsor/Funder: | Commission of the European Communities Commission of the European Communities |
| Funder's Grant Number: | 283798 302088 |
| Keywords: | Science & Technology Technology Physical Sciences Energy & Fuels Materials Science, Multidisciplinary Physics, Applied Materials Science Physics quantum well strain compensation lattice match multijunction subcell bandgap engineering III-V semiconductors CARRIER COLLECTION EFFICIENCY DETAILED BALANCE LIMIT GAAS STRAIN GROWTH SEMICONDUCTORS SEGREGATION TRANSPORT EPITAXY VOLTAGE Applied Physics 0204 Condensed Matter Physics 0912 Materials Engineering 0999 Other Engineering |
| Publication Status: | Published |
| Appears in Collections: | Physics Experimental Solid State Centre for Environmental Policy Faculty of Natural Sciences |