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Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films

Title: Antiferromagnetism and p‐type conductivity of nonstoichiometric nickel oxide thin films
Authors: Napari, M
Huq, TN
Maity, T
Gomersall, D
Niang, KM
Barthel, A
Thompson, JE
Kinnunen, S
Arstila, K
Sajavaara, T
Hoye, RLZ
Flewitt, AJ
MacManus‐Driscoll, JL
Item Type: Journal Article
Abstract: Plasma‐enhanced atomic layer deposition was used to grow non‐stoichiometric nickel oxide thin films with low impurity content, high crystalline quality, and p‐type conductivity. Despite the non‐stoichiometry, the films retained the antiferromagnetic property of NiO.
Issue Date: 1-Jul-2020
Date of Acceptance: 28-Nov-2019
URI: http://hdl.handle.net/10044/1/76234
DOI: 10.1002/inf2.12076
ISSN: 2567-3165
Start Page: 769
End Page: 774
Journal / Book Title: Infomat
Volume: 2
Issue: 4
Copyright Statement: © 2020 The Authors. InfoMat published by John Wiley & Sons Australia, Ltd on behalf of UESTC. This is an open access article under the terms of the Creative Commons Attribution License (http://creativecommons.org/licenses/by/4.0/), which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
Sponsor/Funder: Magdalene College, University of Cambridge
Royal Academy of Engineering
Royal Academy Of Engineering
Funder's Grant Number: RF\201718\17101
RF\201718\17101
Publication Status: Published
Article Number: inf2.12076
Online Publication Date: 2020-01-17
Appears in Collections:Materials
Faculty of Engineering