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A high-speed silicon based few-electron memory with metal-oxide-semiconductor field-effect transistor gain element
| File | Description | Size | Format | |
|---|---|---|---|---|
 Durrani_Irvine et al, A high-speed silicon based few-electron memory with metal-oxide-semiconductor field-effect transistor gain element.pdf | Published version | 719.03 kB | Adobe PDF | View/Open |
| Title: | A high-speed silicon based few-electron memory with metal-oxide-semiconductor field-effect transistor gain element |
| Authors: | Irvine, AC Durrani, ZAK Ahmed, H |
| Item Type: | Journal Article |
| Issue Date: | 31-Dec-2000 |
| URI: | http://hdl.handle.net/10044/1/13750 |
| DOI: | http://dx.doi.org/10.1063/1.373584 |
| ISSN: | 0021-8979 |
| Publisher: | American Institute of Physics |
| Start Page: | 8594 |
| End Page: | 8603 |
| Journal / Book Title: | Journal of Applied Physics |
| Volume: | 87 |
| Issue: | 12 |
| Copyright Statement: | © 2000 American Institute of Physics. |
| Appears in Collections: | Electrical and Electronic Engineering |