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An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation
| File | Description | Size | Format | |
|---|---|---|---|---|
 An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation_final.pdf | Accepted version | 1.3 MB | Adobe PDF | View/Open |
| Title: | An Extended CMOS ISFET Model Incorporating the Physical Design Geometry and the Effects on Performance and Offset Variation |
| Authors: | Liu, Y Georgiou, P Prodromakis, T Constandinou, TG Toumazou, C |
| Item Type: | Journal Article |
| Issue Date: | 21-Oct-2011 |
| URI: | http://hdl.handle.net/10044/1/10999 |
| DOI: | http://dx.doi.org/10.1109/TED.2011.2168821 |
| ISSN: | 0018-9383 |
| Publisher: | IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC |
| Start Page: | 4414 |
| End Page: | 4422 |
| Journal / Book Title: | IEEE TRANSACTIONS ON ELECTRON DEVICES |
| Volume: | 58 |
| Issue: | 12 |
| Copyright Statement: | © 2011 IEEE. This work has been submitted to the IEEE for possible publication. Copyright may be transferred without notice, after which this version may no longer be accessible |
| Appears in Collections: | Electrical and Electronic Engineering |