Tunable hybrid silicon single-electron transistor-nanoscale field-effect transistor operating at room temperature
File(s)
Published version
Author(s)
Type
Journal Article
Abstract
A hybrid silicon single-electron transistor (SET)–field-effect transistor (FET), tunable by gate voltages between single-electron and classical FET operation, at room temperature (RT) is demonstrated. The device uses a side-gated, ∼6 nm wide, heavily doped n+ silicon fin. A gate-controlled transition occurs from a depletion mode FET, including characteristic output saturation, to a quantum dot SET with “Coulomb diamond” characteristics above and near the threshold voltage, respectively. Below the threshold voltage, p-FET behavior implies ambipolar operation. Statistics for 180 research devices show a high yield of ∼37% for RT SET–FET operation and mean single-electron addition energy ∼0.3 eV. This yield also demonstrates the probability of single-electron effects in highly scaled doped nanoFETs and the possibility of electrically tunable, RT quantum and classical mode, nanoelectronic circuits.
Date Issued
2023-06-05
Date Acceptance
2023-05-27
Citation
Applied Physics Letters, 2023, 122 (23)
ISSN
0003-6951
Publisher
American Institute of Physics
Journal / Book Title
Applied Physics Letters
Volume
122
Issue
23
Copyright Statement
© 2023 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http:// creativecommons.org/licenses/by/4.0/).
License URL
Identifier
https://www.webofscience.com/api/gateway?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:001004435900006&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=a2bf6146997ec60c407a63945d4e92bb
Subjects
Physical Sciences
Physics
Physics, Applied
QUBIT
Science & Technology
SPIN
TRANSPORT
Publication Status
Published
Article Number
233504
Date Publish Online
2023-06-07