Dislocation core structures in Si-doped GaN
File(s)
Accepted version
Author(s)
Type
Journal Article
Abstract
Aberration-corrected scanning transmission electron microscopy was used to investigate the core structures of threading dislocations in plan-view geometry of GaNfilms with a range of Si-doping levels and dislocation densities ranging between (5 ± 1) × 108 and (10 ± 1) × 109 cm−2. All a-type (edge) dislocation core structures in all samples formed 5/7-atom ring core structures, whereas all (a + c)-type (mixed) dislocations formed either double 5/6-atom, dissociated 7/4/8/4/9-atom, or dissociated 7/4/8/4/8/4/9-atom core structures. This shows that Si-doping does not affect threading dislocation core structures in GaN. However, electron beam damage at 300 keV produces 4-atom ring structures for (a + c)-type cores in Si-doped GaN.
Date Issued
2015-12-14
Date Acceptance
2015-11-25
Citation
Applied Physics Letters, 2015, 107 (24)
ISSN
0003-6951
Publisher
AIP
Journal / Book Title
Applied Physics Letters
Volume
107
Issue
24
Copyright Statement
Copyright © 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Applied Physics Letters 107, 243104 (2015); and may be found at https://dx.doi.org/10.1063/1.4937457
Subjects
Applied Physics
09 Engineering
02 Physical Sciences
Notes
received: 2015-10-23 accepted: 2015-11-25 published: 2015-12-15
Publication Status
Published
Article Number
243104