The memristor is a revolutionary passive device that has gained popularity in recent years as a possible contender for next-generation nonvolatile memory and analogue computing. This work presents a passive selectorless memristive memory crossbar array. It presents a 16x16 array with a one capacitor and one memristor (1CIR) core cell. The 1CIR configuration is a promising memory structure because of its high density, lower power consumption, faster speed, and more importantly the monotonic relationship between the charges on the capacitor and the memristance. Data readout in this work is carried out by an 8-bit time to digital converter. Results show that the 1C1R structure can successfully store 1-bit of information by splitting the resistance of the memristor (memristance) into two states of 10.07KΩ (bit 1) and 3.38 MΩ (bit 0). The total area of the proposed array is 0.4 mm 2 in a SkyWater130nm CMOS technology.