Indacenodithiophene–benzothiadiazole organic field-effect transistors
with gravure-printed semiconductor and dielectric on plastic
with gravure-printed semiconductor and dielectric on plastic
File(s)
Published version
Author(s)
Campbell, AJ
Higgins, SG
Muir, BVO
Heeney, M
Type
Journal Article
Abstract
We demonstrate the gravure printing of a high-performance indacenodithiophene (IDT) copolymer, indacenodithiophene–benzothiadiazole (C16IDT–BT), onto self-aligned organic field-effect transistor architectures on flexible plastic substrates. We observed that the combination of a gravure-printed dielectric with gravure-printed semiconductor yielded devices with higher mean-effective mobility than devices manufactured using photolithographically patterned dielectric. Peak mobilities of μ = 0.1 cm2 V−1 s−1 were measured, and exceed previous reports for non-printed C16IDT-BT on non-flexible silicon substrates.
Date Issued
2015-10-08
Date Acceptance
2015-09-15
Citation
MRS Communications, 2015, 5 (4), pp.599-603
ISSN
2159-6867
Publisher
Cambridge University Press (CUP): STM Journals
Start Page
599
End Page
603
Journal / Book Title
MRS Communications
Volume
5
Issue
4
Copyright Statement
Copyright © Materials Research Society 2015 This is an Open Access article, distributed under the terms of the Creative Commons Attribution licence (http://creativecommons.org/licenses/by/3.0/), which permits unrestricted re-use, distribution, and reproduction in any medium, provided the original work is properly cited.
License URL
Sponsor
Commission of the European Communities
Grant Number
247978
Publication Status
Published