Room temperature single electron charging in single silicon nanochains
Author(s)
Type
Journal Article
Abstract
Single-electron charging effects are observed at room temperature in single Si nanochains. The
nanochains, grown by thermal evaporation of SiO solid sources, consist of a series of Si
nanocrystals 10 nm in diameter, separated by SiO2 regions. Multiple step Coulomb staircase
current-voltage characteristics are observed at 300 K in devices using single, selected, nanochains. The characteristics are investigated using a model where the nanochain forms a multiple tunnel junction. The single-electron charging energy for a nanocrystal within the multiple-tunnel junction is EC=e^2 /2Ceff ˜0.32 eV, 12kBT at 300 K
nanochains, grown by thermal evaporation of SiO solid sources, consist of a series of Si
nanocrystals 10 nm in diameter, separated by SiO2 regions. Multiple step Coulomb staircase
current-voltage characteristics are observed at 300 K in devices using single, selected, nanochains. The characteristics are investigated using a model where the nanochain forms a multiple tunnel junction. The single-electron charging energy for a nanocrystal within the multiple-tunnel junction is EC=e^2 /2Ceff ˜0.32 eV, 12kBT at 300 K
Date Issued
2008
Citation
Journal of Applied Physics, 2008, 103, pp.053705-053705-4
ISSN
0021-8979
Publisher
AMER INST PHYSICS
Start Page
053705
End Page
053705-4
Journal / Book Title
Journal of Applied Physics
Volume
103
Issue
5
Copyright Statement
© 2008 American Institute of Physics.
Description
06/05/14 meb. Publisher PDF, Ok to add.
Identifier
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=000254025000044&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
ARTN 053705
Publication Status
Published