TiO2-x-enhanced IR hot carrier based photodetection in metal thin film-si junctions

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Title: TiO2-x-enhanced IR hot carrier based photodetection in metal thin film-si junctions
Authors: Gusken, NA
Lauri, A
Li, Y
Matsui, T
Doiron, B
Bower, R
Regoutz, A
Mihai, A
Petrov, PK
Oulton, RF
Cohen, LF
Maier, SA
Item Type: Journal Article
Abstract: We investigate titanium nitride (TiN) thin film coatings on silicon for CMOS-compatible sub-bandgap charge separation upon incident illumination, which is a key feature in the vast field of on-chip photodetection and related integrated photonic devices. Titanium nitride of tunable oxidation distributions serves as an adjustable broadband light absorber with high mechanical robustness and strong chemical resistivity. Backside-illuminated TiN on p-type Si (pSi) constitutes a self-powered and refractory alternative for photodetection, providing a photoresponsivity of about ∼1 mA/W at 1250 nm and zero bias while outperforming conventional metal coatings such as gold (Au). Our study discloses that the enhanced photoresponse of TiN/pSi in the near-infrared spectral range is directly linked to trap states in an ultrathin TiO2–x interfacial interlayer that forms between TiN and Si. We show that a pSi substrate in conjunction with a few nanometer thick amorphous TiO2–x film can serve as a platform for photocurrent enhancement of various other metals such as Au and Ti. Moreover, the photoresponse of Au on a TiO2–x/pSi platform can be increased to about 4 mA/W under 0.45 V reverse bias at 1250 nm, allowing for controlled photoswitching. A clear deviation from the typically assumed Fowler-like response is observed, and an alternative mechanism is proposed to account for the metal/semiconductor TiO2–x interlayer, capable of facilitating hole transport.
Issue Date: 8-Apr-2019
Date of Acceptance: 1-Apr-2019
URI: http://hdl.handle.net/10044/1/70160
DOI: https://dx.doi.org/10.1021/acsphotonics.8b01639
ISSN: 2330-4022
Publisher: American Chemical Society
Start Page: 953
End Page: 960
Journal / Book Title: ACS Photonics
Volume: 6
Issue: 4
Copyright Statement: © 2019 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Photonics, after peer review and technical editing by the publisher. To access the final edited and published work see https:/dx.doi.org/10.1021/acsphotonics.8b01639
Sponsor/Funder: Engineering & Physical Science Research Council (E
The Leverhulme Trust
Engineering and Physical Sciences Research Council
Funder's Grant Number: EP/M013812/1
RPG-2016-064
EP/M013812/1
Keywords: Science & Technology
Technology
Physical Sciences
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Optics
Physics, Applied
Physics, Condensed Matter
Science & Technology - Other Topics
Materials Science
Physics
hot carriers
TiN thin films
TiO2-x
sub-bandgap photodetection
CMOS compatible
REFRACTORY PLASMONICS
TIO2
GENERATION
EXCITATION
TRAPS
Science & Technology
Technology
Physical Sciences
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Optics
Physics, Applied
Physics, Condensed Matter
Science & Technology - Other Topics
Materials Science
Physics
hot carriers
TiN thin films
TiO2-x
sub-bandgap photodetection
CMOS compatible
REFRACTORY PLASMONICS
TIO2
GENERATION
EXCITATION
TRAPS
Publication Status: Published
Embargo Date: 2020-04-08
Online Publication Date: 2019-04-08
Appears in Collections:Faculty of Engineering
Materials
Physics
Experimental Solid State
Faculty of Natural Sciences



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