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Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3 Passivation Interface

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Title: Highly Stable Plasmon Induced Hot Hole Transfer into Silicon via a SrTiO3 Passivation Interface
Authors: Matsui, T
Li, Y
Hsu, M-HM
Merckling, C
Oulton, RF
Cohen, LF
Maier, SA
Item Type: Journal Article
Abstract: Extracting plasmon‐induced hot carriers over a metal–semiconductor Schottky barrier enables photodetection below the semiconductor bandgap energy. However, interfacial carrier recombination hinders the efficiency and stability of this process, severely limiting its implementation in telecommunication. This study proposes and demonstrates the use of epitaxially grown lattice‐matched SrTiO3 for interfacial passivation of silicon‐based plasmonic Schottky devices. The devices are activated by an electrical soft‐breakdown of the interfacial SrTiO3 layer, resulting in reproducible rectified Schottky characteristics. The transition to a low resistance state of the SrTiO3 layer boosts the extraction efficiency of hot holes upon resonant plasmonic excitation, giving rise to a two orders of magnitude higher photocurrent compared to devices with a native oxide layer. Photoresponse, tunability, and barrier height studies under reverse biases as high as 100 V present superior stability with the incorporation of the SrTiO3 layer. The investigation paves the way toward plasmon‐induced photodetection for practical applications including those under challenging operating conditions.
Issue Date: 25-Apr-2018
Date of Acceptance: 22-Jan-2018
URI: http://hdl.handle.net/10044/1/60108
DOI: https://dx.doi.org/10.1002/adfm.201705829
ISSN: 1616-301X
Publisher: WILEY-V C H VERLAG GMBH
Journal / Book Title: ADVANCED FUNCTIONAL MATERIALS
Volume: 28
Issue: 17
Copyright Statement: © 2018 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim. This is the accepted version of the following article: T. Matsui, Y. Li, M.‐H. M. Hsu, C. Merckling, R. F. Oulton, L. F. Cohen, S. A. Maier, Adv. Funct. Mater. 2018, 28, 1705829. https://doi.org/10.1002/adfm.201705829
Sponsor/Funder: Engineering & Physical Science Research Council (E
Funder's Grant Number: EP/M013812/1
Keywords: Science & Technology
Physical Sciences
Technology
Chemistry, Multidisciplinary
Chemistry, Physical
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Chemistry
Science & Technology - Other Topics
Materials Science
Physics
hot carrier photodetectors
interfaces
plasmonics
Schottky barrier
strontium titanate
CURRENT-VOLTAGE CHARACTERISTICS
SCHOTTKY-BARRIER
ELECTRON PHOTODETECTION
DIODES
OXIDE
MOS2
COLLECTION
EXTRACTION
GENERATION
ENERGY
03 Chemical Sciences
09 Engineering
02 Physical Sciences
Materials
Publication Status: Published
Article Number: ARTN 1705829
Online Publication Date: 2018-02-21
Appears in Collections:Physics
Experimental Solid State
Faculty of Natural Sciences



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