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Electronic Properties of Copper(I) Thiocyanate (CuSCN)

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CuSCN Review Article_Adv. Electron. Mater. 2017, 1600378.pdfAccepted version1.3 MBAdobe PDFView/Open
Title: Electronic Properties of Copper(I) Thiocyanate (CuSCN)
Authors: Pattanasattayavong, P
Promarak, V
Anthopoulos, TD
Item Type: Journal Article
Abstract: With the emerging applications of copper(I) thiocyanate (CuSCN) as a transparent and solution-processable hole-transporting semiconductor in numerous opto/electronic devices, fundamental studies that cast light on the charge transport physics are essential as they provide insights critical for further materials and devices performance advancement. The aim of this article is to provide a comprehensive and up-to-date report of the electronic properties of CuSCN with key emphasis on the structure–property relationship. The article is divided into four parts. In the first section, recent works on density functional theory calculations of the electronic band structure of hexagonal β-CuSCN are reviewed. Following this, various defects that may contribute to the conductivity of CuSCN are discussed, and newly predicted phases characterized by layered 2-dimensional-like structures are highlighted. Finally, a summary of recent studies on the band-tail states and hole transport mechanisms in solution-deposited, polycrystalline CuSCN layers is presented.
Issue Date: 10-Feb-2017
Date of Acceptance: 1-Feb-2017
URI: http://hdl.handle.net/10044/1/49320
DOI: https://dx.doi.org/10.1002/aelm.201600378
ISSN: 2199-160X
Publisher: Wiley
Journal / Book Title: Advanced Electronic Materials
Volume: 3
Issue: 3
Copyright Statement: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the accepted version of the following article: P. Pattanasattayavong, V. Promarak, T. D. Anthopoulos, Adv. Electron. Mater. 2017, 3, 1600378, which has been published in final form at https://dx.doi.org/10.1002/aelm.201600378
Keywords: Science & Technology
Technology
Physical Sciences
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Science & Technology - Other Topics
Materials Science
Physics
Copper(I) thiocyanate (CuSCN)
defects
density functional theory (DFT)
electronic band structure
hole transport
wide band gap semiconductors
TIO2 SOLAR-CELLS
ROOM-TEMPERATURE
HOLE TRANSPORT
THIN-FILMS
AMORPHOUS-SEMICONDUCTORS
OPTICAL-PROPERTIES
LAYER
TRANSISTORS
IODIDE
SELENOCYANATE
Publication Status: Published
Article Number: ARTN 1600378
Appears in Collections:Physics
Experimental Solid State
Faculty of Natural Sciences



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