Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution

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Title: Modulation-Doped In2O3/ZnO Heterojunction Transistors Processed from Solution
Authors: Khim, D
Lin, Y-H
Nam, S
Faber, H
Tetzner, K
Li, R
Zhang, Q
Li, J
Zhang, X
Anthopoulos, TD
Item Type: Journal Article
Abstract: This paper reports the controlled growth of atomically sharp In2O3/ZnO and In2O3/Li-doped ZnO (In2O3/Li-ZnO) heterojunctions via spin-coating at 200 °C and assesses their application in n-channel thin-film transistors (TFTs). It is shown that addition of Li in ZnO leads to n-type doping and allows for the accurate tuning of its Fermi energy. In the case of In2O3/ZnO heterojunctions, presence of the n-doped ZnO layer results in an increased amount of electrons being transferred from its conduction band minimum to that of In2O3 over the interface, in a process similar to modulation doping. Electrical characterization reveals the profound impact of the presence of the n-doped ZnO layer on the charge transport properties of the isotype In2O3/Li-ZnO heterojunctions as well as on the operating characteristics of the resulting TFTs. By judicious optimization of the In2O3/Li-ZnO interface microstructure, and Li concentration, significant enhancement in both the electron mobility and TFT bias stability is demonstrated.
Issue Date: 15-Mar-2017
Date of Acceptance: 15-Mar-2017
URI: http://hdl.handle.net/10044/1/49001
DOI: https://dx.doi.org/10.1002/adma.201605837
ISSN: 0935-9648
Publisher: Wiley
Journal / Book Title: Advanced Materials
Volume: 29
Issue: 19
Copyright Statement: © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim. This is the accepted version of the following article: D. Khim, Y.-H. Lin, S. Nam, H. Faber, K. Tetzner, R. Li, Q. Zhang, J. Li, X. Zhang, T. D. Anthopoulos, Adv. Mater. 2017, 29, 1605837., which has been published in final form at https://dx.doi.org/10.1002/adma.201605837
Keywords: Science & Technology
Physical Sciences
Technology
Chemistry, Multidisciplinary
Chemistry, Physical
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Chemistry
Science & Technology - Other Topics
Materials Science
Physics
electron mobility
heterojunction transistors
metal oxides
modulation doping
semiconductors
solution processing
thin film transistors
THIN-FILM TRANSISTORS
FIELD-EFFECT TRANSISTORS
HIGH-PERFORMANCE
ROOM-TEMPERATURE
SOL-GEL
ELECTRON-GAS
ZINC-OXIDE
ZNO
SEMICONDUCTORS
MOBILITY
02 Physical Sciences
03 Chemical Sciences
09 Engineering
Publication Status: Published
Article Number: ARTN 1605837
Appears in Collections:Physics
Experimental Solid State
Faculty of Natural Sciences



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