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Dynamical calculation of third harmonic generation in a semiconductor quantum well

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Title: Dynamical calculation of third harmonic generation in a semiconductor quantum well
Authors: Guazzotti, S
Pusch, A
Reiter, D
Hess, O
Item Type: Journal Article
Abstract: Non-linear phenomena in optically excited semiconductor structures are of high interest. We here develop a model capable of studying the dynamics of the photoexcited carriers, including Coulomb interaction on a Hartree-Fock level, on the same footing as the dynamics of the light field impinging on an arbitrary photonic structure. Applying this method to calculate the third harmonic generation in a semiconductor quantum well embedded in a Bragg mirror structure, we find that the power-law exponent of the intensity dependence of the third harmonic generation depends on the frequency of the exciting pulse. Off-resonant pulses follow the expected cubic dependence, while the exponent is smaller for resonant pulses due to saturation effects in the induced carrier density. Our study provides a detailed understanding of the carrier and light field dynamics during non-linear processes.
Issue Date: 6-Sep-2016
Date of Acceptance: 17-Aug-2016
URI: http://hdl.handle.net/10044/1/39678
DOI: https://dx.doi.org/10.1103/PhysRevB.94.115303
ISSN: 1550-235X
Publisher: American Physical Society
Journal / Book Title: Physical Review B
Volume: 94
Copyright Statement: © 2016 The American Physical Society
Sponsor/Funder: European Office Of Aerospace Research & Developmen
Funder's Grant Number: FA9550-14-1-0181
German Academic Exchange Service
Keywords: Science & Technology
Physical Sciences
Physics, Condensed Matter
Physics
3RD HARMONIC-GENERATION
TIME-DOMAIN APPROACH
SPATIOTEMPORAL DYNAMICS
OPTICAL NONLINEARITY
CARBON NANOTUBES
MICROSCOPY
LASER
KINETICS
Fluids & Plasmas
02 Physical Sciences
03 Chemical Sciences
Publication Status: Published
Article Number: 115303
Appears in Collections:Condensed Matter Theory
Physics
Faculty of Natural Sciences



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