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Photoluminescence upconversion at GaAs/InGaP2 interfaces driven by a sequential two-photon absorption mechanism

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Up-conversion_manuscript_revised.pdfAccepted version793.29 kBAdobe PDFView/Open
PhysRevB.93.235303.pdfPublished version598.56 kBAdobe PDFView/Open
Title: Photoluminescence upconversion at GaAs/InGaP2 interfaces driven by a sequential two-photon absorption mechanism
Authors: Hylton, N
Hinrichsen, TF
Vaquero-Stainer, AR
Yoshida, M
Pusch, A
Hopkinson, M
Hess, O
Phillips, CC
Ekins-Daukes, NJ
Item Type: Journal Article
Issue Date: 9-Jun-2016
Date of Acceptance: 27-Apr-2016
URI: http://hdl.handle.net/10044/1/31682
DOI: http://dx.doi.org/10.1103/PhysRevB.93.235303
ISSN: 2469-9950
Publisher: American Physical Society
Journal / Book Title: Physical Review B
Volume: 93
Issue: 23
Copyright Statement: This article is available under the terms of the Creative Commons Attribution 3.0 License.
Sponsor/Funder: Engineering & Physical Science Research Council (EPSRC)
Funder's Grant Number: EP/K029398/1
Publication Status: Published
Open Access location: http://journals.aps.org/prb/abstract/10.1103/PhysRevB.93.235303
Article Number: 235303
Appears in Collections:Condensed Matter Theory
Physics
Experimental Solid State
Centre for Environmental Policy
Faculty of Natural Sciences



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