Field-Effect Transistors Using Silicon Nanowires Prepared by Electroless Chemical Etching

Title: Field-Effect Transistors Using Silicon Nanowires Prepared by Electroless Chemical Etching
Authors: Zaremba-Tymieniecki, M
Li, C
Fobelets, K
Durrani, ZAK
Item Type: Journal Article
Issue Date: 1-Aug-2010
URI: http://hdl.handle.net/10044/1/13809
DOI: http://dx.doi.org/10.1109/LED.2010.2050572
ISSN: 0741-3106
Publisher: IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Start Page: 860
End Page: 862
Journal / Book Title: IEEE ELECTRON DEVICE LETTERS
Volume: 31
Issue: 8
Copyright Statement: © 2010 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Publication Status: Published
Appears in Collections:Electrical and Electronic Engineering



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