A high-speed silicon based few-electron memory with metal-oxide-semiconductor field-effect transistor gain element

Title: A high-speed silicon based few-electron memory with metal-oxide-semiconductor field-effect transistor gain element
Authors: Irvine, AC
Durrani, ZAK
Ahmed, H
Item Type: Journal Article
Issue Date: 31-Dec-2000
URI: http://hdl.handle.net/10044/1/13750
DOI: http://dx.doi.org/10.1063/1.373584
ISSN: 0021-8979
Publisher: American Institute of Physics
Start Page: 8594
End Page: 8603
Journal / Book Title: Journal of Applied Physics
Volume: 87
Issue: 12
Copyright Statement: © 2000 American Institute of Physics.
Appears in Collections:Electrical and Electronic Engineering



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