Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs

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Title: Average drift mobility and apparent sheet-electron density profiles in strained-Si-SiGe buried-channel depletion-mode n-MOSFETs
Author(s): Michelakis, K
Vilches, A
Papavassiliou, C
Despotopoulos, S
Fobelets, K
Toumazou, C
Item Type: Journal Article
Content Version: Published version
Publication Date: 1-Aug-2004
Citation: IEEE T ELECTRON DEV Vol.( 51 ) No.( 8 ) pp 1309 - 1314
URI: http://hdl.handle.net/10044/1/1221
Publisher Link: http://dx.doi.org/10.1109/TED.2004.832727
DOI: 10.1109/TED.2004.832727
ISSN: 0018-9383
Start Page: 1309
End Page: 1314
Copyright Statement: © 2004 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This material is presented to ensure timely dissemination of scholarly and technical work. Copyright and all rights therein are retained by authors or by other copyright holders. All persons copying this information are expected to adhere to the terms and constraints invoked by each author's copyright. In most cases, these works may not be reposted without the explicit permission of the copyright holder.
Volume: 51
Appears in Collections:Optical and Semiconductor Devices
Institute of Biomedical Engineering
Circuits and Systems



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