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Defects, diffusion and dopants in Li8SnO6
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1-s2.0-S2405844021015632-main.pdf | Published version | 1.67 MB | Adobe PDF | View/Open |
Title: | Defects, diffusion and dopants in Li8SnO6 |
Authors: | Kuganathan, N Chroneos, A Vovk, R Solovjov, A |
Item Type: | Journal Article |
Abstract: | Octalithium tin (IV) oxide (Li8SnO6) is an important electrode material considered for lithium ion batteries (LIBs) because of its high lithium content. We employed atomistic simulations to examine the intrinsic defects, diffusion of Li-ions together with their migration energies and solution of potential dopants in Li8SnO6. The most thermodynamically favourable intrinsic defect is the Li Frenkel which increases the concentration of Li vacancies needed for the vacancy mediated diffusion of Li-ions in Li8SnO6. The calculated activation energy of migration of Li-ions (0.21eV) shows that the Li-ion conductivity in this material can be very fast. Promising isovalent dopants on the Li and Sn sites are Na and Ti, respectively. Doping of Ga on the Sn site can facilitate the formation of Li interstitials as well as oxygen vacancies in Li8SnO6. While the concentration of Li interstitials can enhance the capacity of this material, oxygen vacancies together with Li interstitials can lead to the loss of Li2O in Li8SnO6. |
Issue Date: | Jul-2021 |
Date of Acceptance: | 29-Jun-2021 |
URI: | http://hdl.handle.net/10044/1/90744 |
DOI: | 10.1016/j.heliyon.2021.e07460 |
ISSN: | 2405-8440 |
Publisher: | Elsevier |
Start Page: | 1 |
End Page: | 6 |
Journal / Book Title: | Heliyon |
Volume: | 7 |
Issue: | 7 |
Copyright Statement: | © 2021 The Authors. Published by Elsevier Ltd. This is an open access article under the CC BY license (http://creativecommons.org/licenses/by/4.0/). |
Keywords: | Atomistic simulation Defects Diffusion Dopants Li8SnO6 |
Publication Status: | Published |
Online Publication Date: | 2021-07-02 |
Appears in Collections: | Materials |
This item is licensed under a Creative Commons License