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Room-temperature measurement of electrostatically coupled, dopant-atom double quantum dots in point-contact transistors

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Title: Room-temperature measurement of electrostatically coupled, dopant-atom double quantum dots in point-contact transistors
Authors: Abualnaja, F
Wang, C
Veigang-Radulescu, V-P
Griffiths, J
Andreev, A
Jones, M
Durrani, Z
Item Type: Journal Article
Abstract: The reduction of nanoelectronic devices to sub-10 nm sizes raises the prospect of electronics at the atomic scale, while also facilitating studies on nanoscale device physics. Single-atom transistors, where the current-switching element is formed by one atom and the information packet size is reduced to one electron, can create electronic switches scaled to their ultimate physical limits. Hitherto, single-atom transistor operation has been limited to low temperatures due to shallow quantum wells, which inhibit room-temperature nanoelectronic applications. Furthermore, the interaction between multiple single-atom elements at room temperature has yet to be demonstrated. Here, we show that quantum interactions between P dopants in Si / Si O 2 / Si single-atom transistors lead to room-temperature double quantum dot behavior. Hexagonal regions of charge stability and gate-controlled tunnel coupling between P atoms are observed at room temperature. Image processing is used to help reduce observer bias in data analysis. Single-electron device simulation is used to investigate evolution of the charge-stability region with varying capacitance and resistance. In combination with extracted tunnel capacitances and resistances, this allows experimental trends to be reproduced and provides information on the dopant-atom arrangement.
Issue Date: 23-Dec-2019
Date of Acceptance: 1-Dec-2019
URI: http://hdl.handle.net/10044/1/76132
DOI: 10.1103/PhysRevApplied.12.064050
ISSN: 2331-7019
Publisher: American Physical Society
Start Page: 1
End Page: 11
Journal / Book Title: Physical Review Applied
Volume: 12
Issue: 6
Copyright Statement: © 2019 American Physical Society
Keywords: Science & Technology
Physical Sciences
Physics, Applied
Physics
ELECTRON-TRANSPORT
SINGLE
DONORS
Science & Technology
Physical Sciences
Physics, Applied
Physics
ELECTRON-TRANSPORT
SINGLE
DONORS
Publication Status: Published
Article Number: ARTN 064050
Online Publication Date: 2019-12-23
Appears in Collections:Electrical and Electronic Engineering