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Room-temperature measurement of electrostatically coupled, dopant-atom double quantum dots in point-contact transistors
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Title: | Room-temperature measurement of electrostatically coupled, dopant-atom double quantum dots in point-contact transistors |
Authors: | Abualnaja, F Wang, C Veigang-Radulescu, V-P Griffiths, J Andreev, A Jones, M Durrani, Z |
Item Type: | Journal Article |
Abstract: | The reduction of nanoelectronic devices to sub-10 nm sizes raises the prospect of electronics at the atomic scale, while also facilitating studies on nanoscale device physics. Single-atom transistors, where the current-switching element is formed by one atom and the information packet size is reduced to one electron, can create electronic switches scaled to their ultimate physical limits. Hitherto, single-atom transistor operation has been limited to low temperatures due to shallow quantum wells, which inhibit room-temperature nanoelectronic applications. Furthermore, the interaction between multiple single-atom elements at room temperature has yet to be demonstrated. Here, we show that quantum interactions between P dopants in Si / Si O 2 / Si single-atom transistors lead to room-temperature double quantum dot behavior. Hexagonal regions of charge stability and gate-controlled tunnel coupling between P atoms are observed at room temperature. Image processing is used to help reduce observer bias in data analysis. Single-electron device simulation is used to investigate evolution of the charge-stability region with varying capacitance and resistance. In combination with extracted tunnel capacitances and resistances, this allows experimental trends to be reproduced and provides information on the dopant-atom arrangement. |
Issue Date: | 23-Dec-2019 |
Date of Acceptance: | 1-Dec-2019 |
URI: | http://hdl.handle.net/10044/1/76132 |
DOI: | 10.1103/PhysRevApplied.12.064050 |
ISSN: | 2331-7019 |
Publisher: | American Physical Society |
Start Page: | 1 |
End Page: | 11 |
Journal / Book Title: | Physical Review Applied |
Volume: | 12 |
Issue: | 6 |
Copyright Statement: | © 2019 American Physical Society |
Keywords: | Science & Technology Physical Sciences Physics, Applied Physics ELECTRON-TRANSPORT SINGLE DONORS Science & Technology Physical Sciences Physics, Applied Physics ELECTRON-TRANSPORT SINGLE DONORS |
Publication Status: | Published |
Article Number: | ARTN 064050 |
Online Publication Date: | 2019-12-23 |
Appears in Collections: | Electrical and Electronic Engineering |