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p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching

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Title: p-Doping of organic hole transport layers in p–i–n perovskite solar cells: correlating open-circuit voltage and photoluminescence quenching
Authors: Du, T
Xu, W
Daboczi, M
Kim, J
Xu, S
Lin, C-T
Kang, H
Lee, K
Heeney, MJ
Kim, J-S
Durrant, JR
McLachlan, MA
Item Type: Journal Article
Abstract: Doping is a widely implemented strategy for enhancing the inherent electronic properties of charge transport layers in photovoltaic (PV) devices. Here, in direct contrast to existing understanding, we find that a reduction in p-doping of the organic hole transport layer (HTL) leads to substantial improvements in PV performance in planar p–i–n perovskite solar cells (PSCs), driven by improvements in open circuit voltage (VOC). Employing a range of transient and steady state characterisation tools, we find that the improvements of VOC correlate with reduced surface recombination losses in less p-doped HTLs. A simple device model including screening of bulk electric fields in the perovskite layer is used to explain this observation. In particular, photoluminescence (PL) emission of complete solar cells shows that efficient performance is correlated to a high PL intensity at open circuit and a low PL intensity at short circuit. We conclude that desirable transport layers for p–i–n PSCs should be charge selective contacts with low doping densities.
Issue Date: 28-Aug-2019
Date of Acceptance: 19-Jul-2019
URI: http://hdl.handle.net/10044/1/72927
DOI: https://dx.doi.org/10.1039/c9ta03896e
ISSN: 2050-7488
Publisher: Royal Society of Chemistry (RSC)
Start Page: 18971
End Page: 18979
Journal / Book Title: Journal of Materials Chemistry A
Volume: 7
Issue: 32
Copyright Statement: © The Royal Society of Chemistry 2019.
Publication Status: Published
Online Publication Date: 2019-07-19
Appears in Collections:Materials
Physics
Chemistry
Faculty of Natural Sciences