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Atomistic simulations of the defect chemistry and self-diffusion of Li-ion in LiAlO2

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Title: Atomistic simulations of the defect chemistry and self-diffusion of Li-ion in LiAlO2
Authors: Kuganathan, N
Dark, J
Sgourou, EN
Panayiotatos, Y
Chroneos, A
Item Type: Journal Article
Abstract: Lithium aluminate, LiAlO2, is a material that is presently being considered as a tritium breeder material in fusion reactors and coating material in Li-conducting electrodes. Here, we employ atomistic simulation techniques to show that the lowest energy intrinsic defect process is the cation anti-site defect (1.10 eV per defect). This was followed closely by the lithium Frenkel defect (1.44 eV per defect), which ensures a high lithium content in the material and inclination for lithium diffusion from formation of vacancies. Li self-diffusion is three dimensional and exhibits a curved pathway with a migration barrier of 0.53 eV. We considered a variety of dopants with charges +1 (Na, K and Rb), +2 (Mg, Ca, Sr and Ba), +3 (Ga, Fe, Co, Ni, Mn, Sc, Y and La) and +4 (Si, Ge, Ti, Zr and Ce) on the Al site. Dopants Mg2+ and Ge4+ can facilitate the formation of Li interstitials and Li vacancies, respectively. Trivalent dopants Fe3+, Ni3+ and Mn3+ prefer to occupy the Al site with exoergic solution energies meaning that they are candidate dopants for the synthesis of Li (Al, M) O2 (M = Fe, Ni and Mn) compounds.
Issue Date: 27-Jul-2019
Date of Acceptance: 25-Jul-2019
URI: http://hdl.handle.net/10044/1/72365
DOI: https://dx.doi.org/10.3390/en12152895
ISSN: 1996-1073
Publisher: MDPI AG
Journal / Book Title: Energies
Volume: 12
Issue: 15
Copyright Statement: © 2019 by the authors. Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Keywords: 09 Engineering
02 Physical Sciences
Publication Status: Published
Article Number: ARTN 2895
Appears in Collections:Materials
Faculty of Engineering