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Performance improvement of commercial ISFET sensors using reactive ion etching

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Title: Performance improvement of commercial ISFET sensors using reactive ion etching
Authors: Panteli, C
Georgiou, P
Fobelets, K
Item Type: Journal Article
Abstract: Reactive Ion Etching (RIE) is used to improve the performance of commercial Complementary Metal Oxide Semiconductor (CMOS) Ion-Sensitive Field-Effect Transistors (ISFETs) by thinning the top passivation layers inherent of the CMOS fabrication process. Using a combination of O2 and SF6 in 50% ratio, both polyimide and Si3N4 layers are etched in one etching step. Etching for different times we find the right remaining layer thickness for best ISFET performance to be ∼1 μm of SiO2. The results show an increase in pH sensitivity of 125%, a 5700% increase in passivation capacitance and a 96% reduction in capacitive attenuation. The RIE etch recipe can be used on multi-project wafers (MPW) to boost CMOS sensor performance.
Issue Date: 15-May-2018
Date of Acceptance: 3-Feb-2018
URI: http://hdl.handle.net/10044/1/68769
DOI: https://dx.doi.org/10.1016/j.mee.2018.02.004
ISSN: 0167-9317
Publisher: Elsevier
Start Page: 61
End Page: 65
Journal / Book Title: Microelectronic Engineering
Volume: 192
Copyright Statement: © 2018 Elsevier B.V. All rights reserved. This manuscript is licensed under the Creative Commons Attribution-NonCommercial-NoDerivatives 4.0 International Licence http://creativecommons.org/licenses/by-nc-nd/4.0/
Keywords: Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Nanoscience & Nanotechnology
Optics
Physics, Applied
Engineering
Science & Technology - Other Topics
Physics
Reactive ion etching
CMOS ISFET
SILICON-NITRIDE
PLASMA
MICROFLUIDICS
CMOS
TRAPPED CHARGE
SURFACES
Applied Physics
0906 Electrical and Electronic Engineering
Publication Status: Published
Online Publication Date: 2019-02-04
Appears in Collections:Electrical and Electronic Engineering
Faculty of Natural Sciences
Faculty of Engineering