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Doping dependence of the second magnetization peak, critical current density and pinning mechanism in BaFe2−xNixAs2 Pnictide superconductors

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Title: Doping dependence of the second magnetization peak, critical current density and pinning mechanism in BaFe2−xNixAs2 Pnictide superconductors
Authors: Sundar, S
Salem Sugui Jr, S
Lovell, E
Vanstone, A
Cohen, LF
Gong, D
Zhang, R
Lu, X
Luo, H
Ghivelder, L
Item Type: Journal Article
Abstract: A series of high quality BaFe$_{2-x}$Ni$_x$As$_2$ pnictide superconductors were studied using magnetic relaxation and isothermal magnetic measurements in order to study the second magnetization peak (SMP) and critical current behaviour in Ni-doped 122 family. The temperature dependence of the magnetic relaxation rate suggests a pinning crossover, whereas, it's magnetic field dependence hints a vortex-lattice structural phase-transition. The activation energy ($U$) estimated using the magnetic relaxation data was analyzed in detail for slightly-underdoped, slightly-overdoped and an overdoped samples, using Maley's method and collective creep theory. Our results confirm that the SMP in these samples is due to the collective (elastic) to plastic creep crossover as has been observed for the other members of 122-family. In addition, we also investigated the doping dependence of the critical current density ($J_c$) and the vortex-pinning behaviour in these compounds. The observed $J_c$ is higher than the threshold limit (10$^5$ A/cm$^2$) considered for the technological potential and even greater than 1 MA/cm$^2$ for slightly underdoped Ni-content, x = 0.092 sample. The pinning characteristics were analyzed in terms of the models developed by Dew-Hughes and Griessen $et$ $al$, which suggest the dominant role of $\delta l$-type pinning.
Issue Date: 21-Jan-2019
Date of Acceptance: 21-Jan-2019
URI: http://hdl.handle.net/10044/1/66224
DOI: https://dx.doi.org/10.1021/acsaelm.8b00014
ISSN: 2637-6113
Publisher: American Chemical Society (ACS)
Journal / Book Title: ACS Applied Electronic Materials
Copyright Statement: © 2019 American Chemical Society. This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Electronic Materials, after peer review and technical editing by the publisher. To access the final edited and published work see https://dx.doi.org/10.1021/acsaelm.8b00014
Sponsor/Funder: The Leverhulme Trust
Engineering and Physical Sciences Research Council
Funder's Grant Number: RPG-2016-306
EP/P030548/1
Publication Status: Published online
Embargo Date: 2020-01-21
Online Publication Date: 2019-01-21
Appears in Collections:Physics
Experimental Solid State
Faculty of Natural Sciences



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