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Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography

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Title: Room-temperature single dopant atom quantum dot transistors in silicon, formed by field-emission scanning probe lithography
Authors: Durrani, Z
Jones, M
Abualnaja, F
Wang, C
Kaestner, M
Lenk, S
Lenk, C
Rangelow, I
Andreev, A
Item Type: Journal Article
Abstract: Electrical operation of room-temperature (RT) single dopant atom quantum dot (QD) transistors, based on phosphorous atoms isolated within nanoscale SiO2 tunnel barriers, is presented. In contrast to single dopant transistors in silicon, where the QD potential well is shallow and device operation limited to cryogenic temperature, here, a deep (∼2 eV) potential well allows electron confinement at RT. Our transistors use ∼10 nm size scale Si/SiO2/Si point-contact tunnel junctions, defined by scanning probe lithography and geometric oxidation. “Coulomb diamond” charge stability plots are measured at 290 K, with QD addition energy ∼0.3 eV. Theoretical simulation gives a QD size of similar order to the phosphorous atom separation ∼2 nm. Extraction of energy states predicts an anharmonic QD potential, fitted using a Morse oscillator-like potential. The results extend single-atom transistor operation to RT, enable tunneling spectroscopy of impurity atoms in insulators, and allow the energy landscape for P atoms in SiO2 to be determined.
Issue Date: 9-Oct-2018
Date of Acceptance: 21-Sep-2018
URI: http://hdl.handle.net/10044/1/64989
DOI: https://dx.doi.org/10.1063/1.5050773
ISSN: 0021-8979
Publisher: AIP Publishing
Journal / Book Title: Journal of Applied Physics
Volume: 124
Issue: 14
Copyright Statement: © 2018 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Journal of Applied Physics 2018 124:14 and may be found at https://dx.doi.org/10.1063/1.5050773
Sponsor/Funder: Commission of the European Communities
Funder's Grant Number: 318804
Keywords: Science & Technology
Physical Sciences
Physics, Applied
01 Mathematical Sciences
02 Physical Sciences
09 Engineering
Applied Physics
Publication Status: Published
Article Number: 144502
Appears in Collections:Electrical and Electronic Engineering
Faculty of Engineering