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GaAsBi: an alternative to InGaAs based multiple quantum well photovoltaics
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![]() | Accepted version | 1.26 MB | Adobe PDF | View/Open |
Title: | GaAsBi: an alternative to InGaAs based multiple quantum well photovoltaics |
Authors: | Richards, RD Harun, F Cheong, JS Mellor, A Hylton, NP Wilson, T Thomas, T Ekins-Daukes, NJ David, JPR |
Item Type: | Conference Paper |
Abstract: | A series of GaAsBi/GaAs multiple quantum well p-i-n diodes are characterized using IV, photocurrent and illuminated IV measurements. The results are compared to an InGaAs/GaAsP multiple quantum well control device of a design that has demonstrated excellent performance in triple junction photovoltaics. The extended absorption of the GaAsBi/GaAs devices, compared to that of the InGaAs/GaAsP device, suggests that GaAsBi/GaAs could present a viable alternative to InGaAs/GaAsP for quad junction photovoltaics. |
Issue Date: | 25-May-2018 |
Date of Acceptance: | 5-Jun-2016 |
URI: | http://hdl.handle.net/10044/1/62830 |
DOI: | https://dx.doi.org/10.1109/PVSC.2017.8366221 |
ISBN: | 9781509027248 |
Publisher: | IEEE |
Start Page: | 1135 |
End Page: | 1137 |
Journal / Book Title: | 2016 IEEE 44th Photovoltaic Specialist Conference, PVSC 2016 |
Volume: | 2016 |
Copyright Statement: | © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works. |
Conference Name: | Photovoltaic Specialists Conference (PVSC) |
Publication Status: | Published |
Start Date: | 2016-06-05 |
Finish Date: | 2016-06-10 |
Conference Place: | Portland, OR, USA |
Online Publication Date: | 2016-11-21 |
Appears in Collections: | Physics Experimental Solid State Centre for Environmental Policy Faculty of Natural Sciences Faculty of Engineering |