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GaAsBi: an alternative to InGaAs based multiple quantum well photovoltaics

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Title: GaAsBi: an alternative to InGaAs based multiple quantum well photovoltaics
Authors: Richards, RD
Harun, F
Cheong, JS
Mellor, A
Hylton, NP
Wilson, T
Thomas, T
Ekins-Daukes, NJ
David, JPR
Item Type: Conference Paper
Abstract: A series of GaAsBi/GaAs multiple quantum well p-i-n diodes are characterized using IV, photocurrent and illuminated IV measurements. The results are compared to an InGaAs/GaAsP multiple quantum well control device of a design that has demonstrated excellent performance in triple junction photovoltaics. The extended absorption of the GaAsBi/GaAs devices, compared to that of the InGaAs/GaAsP device, suggests that GaAsBi/GaAs could present a viable alternative to InGaAs/GaAsP for quad junction photovoltaics.
Issue Date: 25-May-2018
Date of Acceptance: 5-Jun-2016
URI: http://hdl.handle.net/10044/1/62830
DOI: https://dx.doi.org/10.1109/PVSC.2017.8366221
ISBN: 9781509027248
Publisher: IEEE
Start Page: 1135
End Page: 1137
Journal / Book Title: 2016 IEEE 44th Photovoltaic Specialist Conference, PVSC 2016
Volume: 2016
Copyright Statement: © 2016 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other uses, in any current or future media, including reprinting/republishing this material for advertising or promotional purposes, creating new collective works, for resale or redistribution to servers or lists, or reuse of any copyrighted component of this work in other works.
Conference Name: Photovoltaic Specialists Conference (PVSC)
Publication Status: Published
Start Date: 2016-06-05
Finish Date: 2016-06-10
Conference Place: Portland, OR, USA
Online Publication Date: 2016-11-21
Appears in Collections:Physics
Experimental Solid State
Centre for Environmental Policy
Faculty of Natural Sciences
Faculty of Engineering