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Ultra low-loss super-resolution with extremely anisotropic semiconductor metamaterials

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Title: Ultra low-loss super-resolution with extremely anisotropic semiconductor metamaterials
Authors: Hart, WS
Bak, AO
Phillips, CC
Item Type: Journal Article
Abstract: We investigate the mechanisms for the reduction of losses in doped semiconductor multilayers used for the construction of uniaxial metamaterials and show that maxi- mizing the mean scattering time of the doped layers is key to spectrally isolating losses and maximizing anisotropy. By adjusting the layer thickness ratio of the multilayer, we show that the spectral regions of extreme anisotropy can be separated from those of high loss. Using these insights and coupled with realistic semiconductor growth parameters, we demonstrate an InAs-based superlens with an excellent loss factor α ≈ 52mm -1 and maximum perpendicular permittivity, ε ⊥ > 250. By tuning the doping concentration, we show that such a system can be designed to operate anywhere in the region λ 0 ≈ 5 to 25 μ m. We find that such a structure is capable of deep sub-wavelength imaging ( < λ 0 /15) at superlens thicknesses up to ∼ 85 μ m ( ∼ 8 λ 0 ).
Issue Date: 7-Feb-2018
Date of Acceptance: 25-Jan-2018
URI: http://hdl.handle.net/10044/1/56578
DOI: https://dx.doi.org/10.1063/1.5013084
ISSN: 2158-3226
Publisher: American Institute of Physics
Journal / Book Title: AIP Advances
Volume: 8
Copyright Statement: © 2018 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution (CC BY) license (http://creativecommons.org/licenses/by/4.0/).
Sponsor/Funder: Engineering & Physical Science Research Council (EPSRC)
Engineering & Physical Science Research Council (EPSRC)
Funder's Grant Number: EP/G031819/1
Publication Status: Published
Article Number: ARTN 025203
Appears in Collections:Physics
Experimental Solid State
Faculty of Natural Sciences