Charge injection and trapping in TiO2 nanoparticles decorated silicon nanowires arrays

Abstract

We investigate carrier transport properties of silicon nanowire (SiNW) arrays decorated with TiO2 nanoparticles (NPs). Ohmic conduction was dominant at lower voltages and space charge limited current with and without traps was observed at higher voltages. Mott’s 3D variable range hoping mechanism was found to be dominant at lower temperatures. The minimum hopping distance (Rmin) for n and p-SiNWs/TiO2 NPs devices was 1.5 nm and 0.68 nm, respectively, at 77 K. The decrease in the value of Rmin can be attributed to higher carrier mobility in p-SiNWs/TiO2 NPs than that of n-SiNWs/TiO2 NPs hybrid device.