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Single-electron and quantum confinement limits in length-scaled silicon nanowires

Title: Single-electron and quantum confinement limits in length-scaled silicon nanowires
Authors: Wang, C
Jones, ME
Durrani, ZAK
Item Type: Journal Article
Abstract: Quantum-effects will play an important role in both future CMOS and 'beyond CMOS' technologies. By comparing single-electron transistors formed in un-patterned, uniform-width silicon nanowire (SiNW) devices with core widths from ~5–40 nm, and gated lengths of 1 μm and ~50 nm, we show conditions under which these effects become significant. Coulomb blockade drain–source current–voltage characteristics, and single-electron current oscillations with gate voltage have been observed at room temperature. Detailed electrical characteristics have been measured from 8–300 K. We show that while shortening the nanowire gate length to 50 nm reduces the likelihood of quantum dots to only a few, it increases their influence on the electrical characteristics. This highlights explicitly both the significance of quantum effects for understanding the electrical performance of nominally 'classical' SiNW devices and also their potential for new quantum effect 'beyond CMOS' devices.
Issue Date: 10-Jul-2015
Date of Acceptance: 12-Jun-2015
URI: http://hdl.handle.net/10044/1/56166
DOI: https://dx.doi.org/10.1088/0957-4484/26/30/305203
ISSN: 0957-4484
Publisher: IOP Publishing
Journal / Book Title: Nanotechnology
Volume: 26
Issue: 30
Copyright Statement: ©2015 IOP Publishing Ltd.
Sponsor/Funder: Commission of the European Communities
Funder's Grant Number: 318804
Keywords: Science & Technology
Technology
Physical Sciences
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Science & Technology - Other Topics
Materials Science
Physics
silicon nanowires
single electron effects
quantum dots
room temperature single electron transistor
FIELD-EFFECT TRANSISTORS
COULOMB-BLOCKADE
ROOM-TEMPERATURE
DEVICES
WIRE
DOT
TRANSPORT
MEMORY
MD Multidisciplinary
Publication Status: Published
Article Number: 305203
Appears in Collections:Electrical and Electronic Engineering
Faculty of Engineering