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A tunable amorphous p-type ternary oxide system: The highly mismatched alloy of copper tin oxide

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Title: A tunable amorphous p-type ternary oxide system: The highly mismatched alloy of copper tin oxide
Authors: Isherwood, PJM
Butler, KT
Walsh, A
Walls, JM
Item Type: Journal Article
Abstract: The approach of combining two mismatched materials to form an amorphous alloy was used to synthesise ternary oxides of CuO and SnO2. These materials were analysed across a range of compositions, and the electronic structure was modelled using density functional theory. In contrast to the gradual reduction in optical band gap, the films show a sharp reduction in both transparency and electrical resistivity with copper contents greater than 50%. Simulations indicate that this change is caused by a transition from a dominant Sn 5s to Cu 3d contribution to the upper valence band. A corresponding decrease in energetic disorder results in increased charge percolation pathways: a “compositional mobility edge.” Contributions from Cu(II) sub band-gap states are responsible for the reduction in optical transparency.
Issue Date: 9-Sep-2015
Date of Acceptance: 17-Aug-2015
URI: http://hdl.handle.net/10044/1/49090
DOI: https://dx.doi.org/10.1063/1.4929752
ISSN: 0021-8979
Publisher: AIP Publishing
Journal / Book Title: Journal of Applied Physics
Volume: 118
Issue: 10
Copyright Statement: © 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Patrick J. M. Isherwood, Keith T. Butler, Aron Walsh, and John M. Walls. A tunable amorphous p-type ternary oxide system: The highly mismatched alloy of copper tin oxide. Journal of Applied Physics 118, 105702 (2015); doi: http://dx.doi.org/10.1063/1.4929752 and may be found at https://dx.doi.org/10.1063/1.4929752
Keywords: Science & Technology
Physical Sciences
Physics, Applied
Physics
AUGMENTED-WAVE METHOD
ELECTRONIC-STRUCTURE
CUPROUS-OXIDE
THIN-FILMS
BAND-GAP
SEMICONDUCTOR
DEVICES
DESIGN
ENERGY
CUALO2
Applied Physics
01 Mathematical Sciences
02 Physical Sciences
09 Engineering
Publication Status: Published
Article Number: ARTN 105702
Appears in Collections:Materials