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Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors

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Title: Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors
Authors: Durrani, ZAK
Jones, ME
Wang, C
Liu, D
Griffiths, J
Item Type: Journal Article
Abstract: Single nanometre scale quantum dots (QDs) have significant potential for many 'beyond CMOS' nanoelectronics and quantum computation applications. The fabrication and measurement of few nanometre silicon point-contact QD single-electron transistors are reported, which both operate at room temperature (RT) and are fabricated using standard processes. By combining thin silicon-on-insulator wafers, specific device geometry, and controlled oxidation, <10 nm nanoscale point-contact channels are defined. In this limit of the point-contact approach, ultra-small, few nanometre scale QDs are formed, enabling RT measurement of the full QD characteristics, including excited states to be made. A remarkably large QD electron addition energy ~0.8 eV, and a quantum confinement energy ~0.3 eV, are observed, implying a QD only ~1.6 nm in size. In measurements of 19 RT devices, the extracted QD radius lies within a narrow band, from 0.8 to 2.35 nm, emphasising the single-nanometre scale of the QDs. These results demonstrate that with careful control, 'beyond CMOS' RT QD transistors can be produced using current 'conventional' semiconductor device fabrication techniques.
Issue Date: 24-Mar-2017
Date of Acceptance: 2-Feb-2017
URI: http://hdl.handle.net/10044/1/46087
DOI: 10.1088/1361-6528/aa5ddd
ISSN: 0957-4484
Publisher: IOP Publishing
Start Page: 1
End Page: 11
Journal / Book Title: Nanotechnology
Volume: 28
Issue: 12
Copyright Statement: © 2017 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Nanotechnology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at https://dx.doi.org/10.1088/1361-6528/aa5ddd
Sponsor/Funder: Commission of the European Communities
Funder's Grant Number: 318804
Keywords: Science & Technology
Technology
Physical Sciences
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Science & Technology - Other Topics
Materials Science
Physics
single electron transistors
quantum dot
nanodevices
room temperature single electron effects
DOT
OPERATION
TRANSPORT
DEVICES
LOGIC
Nanoscience & Nanotechnology
Notes: journal_title: Nanotechnology article_type: paper article_title: Excited states and quantum confinement in room temperature few nanometre scale silicon single electron transistors copyright_information: © 2017 IOP Publishing Ltd date_received: 2016-12-05 date_accepted: 2017-02-02 date_epub: 2017-02-23
Publication Status: Published
Article Number: 125208
Online Publication Date: 2017-02-23
Appears in Collections:Electrical and Electronic Engineering
Faculty of Engineering