Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature

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Title: Analysis of Schottky Contact Formation in Coplanar Au/ZnO/Al Nanogap Radio Frequency Diodes Processed from Solution at Low Temperature
Author(s): Semple, J
Rossbauer, S
Anthopoulos, TD
Item Type: Journal Article
Abstract: Much work has been carried out in recent years in fabricating and studying the Schottky contact formed between various metals and the n-type wide bandgap semiconductor zinc oxide (ZnO). In spite of significant progress, reliable formation of such technologically interesting contacts remains a challenge. Here, we report on solution-processed ZnO Schottky diodes based on a coplanar Al/ZnO/Au nanogap architecture and study the nature of the rectifying contact formed at the ZnO/Au interface. Resultant diodes exhibit excellent operating characteristics, including low-operating voltages (±2.5 V) and exceptionally high current rectification ratios of >106 that can be independently tuned via scaling of the nanogap’s width. The barrier height for electron injection responsible for the rectifying behavior is studied using current–voltage–temperature and capacitance–voltage measurements (C–V) yielding values in the range of 0.54–0.89 eV. C–V measurements also show that electron traps present at the Au/ZnO interface appear to become less significant at higher frequencies, hence making the diodes particularly attractive for high-frequency applications. Finally, an alternative method for calculating the Richardson constant is presented yielding a value of 38.9 A cm–2 K–2, which is close to the theoretically predicted value of 32 A cm–2 K–2. The implications of the obtained results for the use of these coplanar Schottky diodes in radio frequency applications is discussed.
Publication Date: 17-Aug-2016
Date of Acceptance: 17-Aug-2016
ISSN: 1944-8244
Publisher: American Chemical Society
Start Page: 23167
End Page: 23174
Journal / Book Title: ACS Applied Materials & Interfaces
Volume: 8
Issue: 35
Sponsor/Funder: Commission of the European Communities
Engineering & Physical Science Research Council (E
Funder's Grant Number: 280221
RG67691 (cl.8.6)
Copyright Statement: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials & Interfaces, © 2016 American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see
Keywords: RFID
Richardson constant
adhesion lithography
planar Schottky diode
radio frequency diode
solution processing
Nanoscience & Nanotechnology
0904 Chemical Engineering
0303 Macromolecular And Materials Chemistry
0306 Physical Chemistry (Incl. Structural)
Publication Status: Published
Appears in Collections:Physics
Experimental Solid State
Faculty of Natural Sciences

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