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Resonant tunnelling features in a suspended silicon nanowire single-hole transistor

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Title: Resonant tunnelling features in a suspended silicon nanowire single-hole transistor
Authors: Llobet, J
Krali, E
Wang, C
Arbiol, J
Jones, ME
Perez-Murano, F
Durrani, ZAK
Item Type: Journal Article
Abstract: Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystalquantum dots has been used to form a single-hole transistor.Transistor fabrication uses a novel and rapid process, based on focused gallium ion beam exposure and anisotropic wet etching, generating <10 nm nanocrystals inside suspended Si nanowires. Electrical characteristics at 10 K show Coulomb diamonds with charging energy ∼27 meV, associated with a single dominant nanocrystal.Resonant tunnelling features with energy spacing ∼10 meV are observed, parallel to both diamond edges. These may be associated either with excited states or hole–acoustic phonon interactions, in the nanocrystal. In the latter case, the energy spacing corresponds well with reported Raman spectroscopy results and phonon spectra calculations.
Issue Date: 30-Nov-2015
Date of Acceptance: 14-Nov-2015
URI: http://hdl.handle.net/10044/1/39068
DOI: http://dx.doi.org/10.1063/1.4936757
ISSN: 1077-3118
Publisher: American Institute of Physics
Journal / Book Title: Applied Physics Letters
Volume: 107
Issue: 22
Copyright Statement: © 2015 AIP Publishing LLC. This article may be downloaded for personal use only. Any other use requires prior permission of the author and AIP Publishing. The following article appeared in Applied Physics Letters and may be found at http://dx.doi.org/10.1063/1.4936757.
Sponsor/Funder: Commission of the European Communities
Funder's Grant Number: 318804
Keywords: Science & Technology
Physical Sciences
Physics, Applied
Applied Physics
09 Engineering
02 Physical Sciences
Publication Status: Published
Article Number: 223501
Appears in Collections:Electrical and Electronic Engineering
Faculty of Engineering