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Electron elevator: excitations across the band gap via a dynamical gap state

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Title: Electron elevator: excitations across the band gap via a dynamical gap state
Authors: Lim, A
Foulkes, WM
Horsfield, AP
Mason, DR
Schleife, A
Draeger, EW
Correa, AA
Item Type: Journal Article
Abstract: We use time-dependent density functional theory to study self-irradiated Si. We calculate the electronic stopping power of Si in Si by evaluating the energy transferred to the electrons per unit path length by an ion of kinetic energy from 1 eV to 100 keV moving through the host. Electronic stopping is found to be significant below the threshold velocity normally identified with transitions across the band gap. A structured crossover at low velocity exists in place of a hard threshold. An analysis of the time dependence of the transition rates using coupled linear rate equations enables one of the excitation mechanisms to be clearly identified: a defect state induced in the gap by the moving ion acts like an elevator and carries electrons across the band gap.
Issue Date: 29-Jan-2016
Date of Acceptance: 29-Sep-2015
URI: http://hdl.handle.net/10044/1/29606
DOI: 10.1103/PhysRevLett.116.043201
ISSN: 0031-9007
Publisher: American Physical Society
Start Page: 1
End Page: 1
Journal / Book Title: Physical Review Letters
Volume: 116
Issue: 4
Copyright Statement: © 2016 American Physical Society
Sponsor/Funder: Engineering and Physical Sciences Research Council
EPSRC
Funder's Grant Number: EP/G036888/1
EP/C524403/1
Keywords: Science & Technology
Physical Sciences
Physics, Multidisciplinary
Physics
COLLISION CASCADES
ENERGY-LOSS
SEMICONDUCTORS
THRESHOLD
cond-mat.mtrl-sci
cond-mat.mtrl-sci
01 Mathematical Sciences
02 Physical Sciences
09 Engineering
General Physics
Publication Status: Published
Conference Place: United States
Article Number: 043201
Online Publication Date: 2016-01-27
Appears in Collections:Condensed Matter Theory
Materials
Physics
Faculty of Natural Sciences
Faculty of Engineering