Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices

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Title: Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices
Authors: Labram, JG
Lin, Y-H
Zhao, K
Li, R
Thomas, SR
Semple, J
Androulidaki, M
Sygellou, L
McLachlan, M
Stratakis, E
Amassian, A
Anthopoulos, TD
Item Type: Journal Article
Issue Date: 13-Feb-2015
Date of Acceptance: 28-Dec-2014
URI: http://hdl.handle.net/10044/1/26728
DOI: https://dx.doi.org/10.1002/adfm.201403862
ISSN: 1616-3028
Publisher: Wiley
Start Page: 1727
End Page: 1736
Journal / Book Title: Advanced Functional Materials
Volume: 25
Issue: 11
Copyright Statement: This is the peer reviewed version of the following article: Labram, J. G., Lin, Y.-H., Zhao, K., Li, R., Thomas, S. R., Semple, J., Androulidaki, M., Sygellou, L., McLachlan, M., Stratakis, E., Amassian, A. and Anthopoulos, T. D. (2015), Signatures of Quantized Energy States in Solution-Processed Ultrathin Layers of Metal-Oxide Semiconductors and Their Devices. Adv. Funct. Mater., 25: 1727–1736. doi: 10.1002/adfm.201403862, which has been published in final form at https://dx.doi.org/10.1002/adfm.201403862.  This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
Keywords: Science & Technology
Physical Sciences
Technology
Chemistry, Multidisciplinary
Chemistry, Physical
Nanoscience & Nanotechnology
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Chemistry
Science & Technology - Other Topics
Materials Science
Physics
THIN-FILM TRANSISTORS
DOUBLE-BARRIER DIODES
ELECTRONIC STRUCTURE
OPTICAL PROPERTIES
LOW-TEMPERATURE
ZNO
EXCITON
Publication Status: Published
Appears in Collections:Faculty of Engineering
Materials
Physics
Experimental Solid State
Faculty of Natural Sciences



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