Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.

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Title: Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies.
Authors: Labram, JG
Lin, YH
Anthopoulos, TD
Item Type: Journal Article
Issue Date: 9-Sep-2015
Date of Acceptance: 16-Jun-2015
URI: http://hdl.handle.net/10044/1/26726
DOI: https://dx.doi.org/10.1002/smll.201501350
ISSN: 1613-6810
Publisher: Wiley-VCH Verlag
Start Page: 5472
End Page: 5482
Journal / Book Title: Small
Volume: 11
Issue: 41
Copyright Statement: This is the peer reviewed version of the following article: Labram, J. G., Lin, Y.-H. and Anthopoulos, T. D. (2015), Exploring Two-Dimensional Transport Phenomena in Metal Oxide Heterointerfaces for Next-Generation, High-Performance, Thin-Film Transistor Technologies. Small, 11: 5472–5482. which has been published in final form at https://dx.doi.org/10.1002/smll.201501350. This article may be used for non-commercial purposes in accordance With Wiley Terms and Conditions for self-archiving.
Keywords: energy quantization
heterostructures
metal oxides
semiconductors
solution processing
transistors
two-dimensional transport
Publication Status: Published
Appears in Collections:Physics
Experimental Solid State
Faculty of Natural Sciences



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