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Seebeck coefficient of one electron

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Title: Seebeck coefficient of one electron
Authors: Durrani, ZAK
Item Type: Journal Article
Abstract: The Seebeck coefficient of one electron, driven thermally into a semiconductor single-electron box, is investigated theoretically. With a finite temperature difference ΔT between the source and charging island, a single electron can charge the island in equilibrium, directly generating a Seebeck effect. Seebeck coefficients for small and finite ΔT are calculated and a thermally driven Coulomb staircase is predicted. Single-electron Seebeck oscillations occur with increasing ΔT, as one electron at a time charges the box. A method is proposed for experimental verification of these effects.
Issue Date: 7-Mar-2014
Date of Acceptance: 1-Feb-2014
URI: http://hdl.handle.net/10044/1/13740
DOI: 10.1063/1.4867775
ISSN: 0021-8979
Publisher: American Institute of Physics
Journal / Book Title: Journal of Applied Physics
Volume: 115
Issue: 9
Copyright Statement: © 2014 AIP Publishing LLC.
Keywords: Science & Technology
Physical Sciences
Physics, Applied
Physics
QUANTUM-DOT
THERMOELECTRIC-MATERIALS
TUNNEL-JUNCTIONS
THERMOPOWER
SILICON
DEVICES
OSCILLATIONS
MEMORY
Science & Technology
Physical Sciences
Physics, Applied
Physics
QUANTUM-DOT
THERMOELECTRIC-MATERIALS
TUNNEL-JUNCTIONS
THERMOPOWER
SILICON
DEVICES
OSCILLATIONS
MEMORY
01 Mathematical Sciences
02 Physical Sciences
09 Engineering
Applied Physics
Publication Status: Published
Article Number: 094508
Appears in Collections:Electrical and Electronic Engineering
Faculty of Engineering