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Seebeck coefficient of one electron
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Title: | Seebeck coefficient of one electron |
Authors: | Durrani, ZAK |
Item Type: | Journal Article |
Abstract: | The Seebeck coefficient of one electron, driven thermally into a semiconductor single-electron box, is investigated theoretically. With a finite temperature difference ΔT between the source and charging island, a single electron can charge the island in equilibrium, directly generating a Seebeck effect. Seebeck coefficients for small and finite ΔT are calculated and a thermally driven Coulomb staircase is predicted. Single-electron Seebeck oscillations occur with increasing ΔT, as one electron at a time charges the box. A method is proposed for experimental verification of these effects. |
Issue Date: | 7-Mar-2014 |
Date of Acceptance: | 1-Feb-2014 |
URI: | http://hdl.handle.net/10044/1/13740 |
DOI: | 10.1063/1.4867775 |
ISSN: | 0021-8979 |
Publisher: | American Institute of Physics |
Journal / Book Title: | Journal of Applied Physics |
Volume: | 115 |
Issue: | 9 |
Copyright Statement: | © 2014 AIP Publishing LLC. |
Keywords: | Science & Technology Physical Sciences Physics, Applied Physics QUANTUM-DOT THERMOELECTRIC-MATERIALS TUNNEL-JUNCTIONS THERMOPOWER SILICON DEVICES OSCILLATIONS MEMORY Science & Technology Physical Sciences Physics, Applied Physics QUANTUM-DOT THERMOELECTRIC-MATERIALS TUNNEL-JUNCTIONS THERMOPOWER SILICON DEVICES OSCILLATIONS MEMORY 01 Mathematical Sciences 02 Physical Sciences 09 Engineering Applied Physics |
Publication Status: | Published |
Article Number: | 094508 |
Appears in Collections: | Electrical and Electronic Engineering Faculty of Engineering |