Charge injection and trapping in TiO2 nanoparticles decorated silicon nanowires arrays
File(s)
Author(s)
Type
Journal Article
Abstract
We investigate carrier transport properties of silicon nanowire (SiNW) arrays decorated with TiO2
nanoparticles (NPs). Ohmic conduction was dominant at lower voltages and space charge limited
current with and without traps was observed at higher voltages. Mott’s 3D variable range hoping
mechanism was found to be dominant at lower temperatures. The minimum hopping distance
(Rmin) for n and p-SiNWs/TiO2 NPs devices was 1.5 nm and 0.68 nm, respectively, at 77 K. The
decrease in the value of Rmin can be attributed to higher carrier mobility in p-SiNWs/TiO2 NPs than
that of n-SiNWs/TiO2 NPs hybrid device.
nanoparticles (NPs). Ohmic conduction was dominant at lower voltages and space charge limited
current with and without traps was observed at higher voltages. Mott’s 3D variable range hoping
mechanism was found to be dominant at lower temperatures. The minimum hopping distance
(Rmin) for n and p-SiNWs/TiO2 NPs devices was 1.5 nm and 0.68 nm, respectively, at 77 K. The
decrease in the value of Rmin can be attributed to higher carrier mobility in p-SiNWs/TiO2 NPs than
that of n-SiNWs/TiO2 NPs hybrid device.
Date Issued
2015-02-18
Date Acceptance
2015-02-06
Citation
Applied Physics Letters, 2015, 106 (7)
ISSN
1077-3118
Publisher
AIP Publishing
Journal / Book Title
Applied Physics Letters
Volume
106
Issue
7
Copyright Statement
Copyright © 2015 American Institute of Physics. This article may be downloaded for personal use only. Any other use requires prior permission of the author and the American Institute of Physics. The following article appeared in Appl. Phys. Lett. 106, 073101 (2015); and may be found at https://doi.org/10.1063/1.4908569
Subjects
Science & Technology
Physical Sciences
Physics, Applied
Physics
PHOTOCATALYTIC ACTIVITY
ELECTRICAL-TRANSPORT
OPTICAL-PROPERTIES
SOLAR-CELLS
THIN-FILMS
SYSTEM
RUTILE
TRAPS
Publication Status
Published
Article Number
073101