Resonant and bound states of charged defects in two-dimensional semiconductors
File(s)
Published version
Supporting information
Author(s)
Type
Journal Article
Abstract
A detailed understanding of charged defects in two-dimensional semiconductors is needed for the development of ultrathin electronic devices. Here, we study negatively charged acceptor impurities in monolayer
WS
2
using a combination of scanning tunneling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multivalley valence band structure of
WS
2
, whereby localized states originating from the secondary valence band maximum at
Γ
hybridize with continuum states from the primary valence band maximum at
K
/
K
′
. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.
WS
2
using a combination of scanning tunneling spectroscopy and large-scale atomistic electronic structure calculations. We observe several localized defect states of hydrogenic wave function character in the vicinity of the valence band edge. Some of these defect states are bound, while others are resonant. The resonant states result from the multivalley valence band structure of
WS
2
, whereby localized states originating from the secondary valence band maximum at
Γ
hybridize with continuum states from the primary valence band maximum at
K
/
K
′
. Resonant states have important consequences for electron transport as they can trap mobile carriers for several tens of picoseconds.
Date Issued
2020-02-24
Date Acceptance
2020-02-06
Citation
Physical Review B: Condensed Matter and Materials Physics, 2020, 101 (8), pp.1-6
ISSN
1098-0121
Publisher
American Physical Society
Start Page
1
End Page
6
Journal / Book Title
Physical Review B: Condensed Matter and Materials Physics
Volume
101
Issue
8
Copyright Statement
©2020 American Physical Society
Sponsor
Engineering and Physical Sciences Research Council
Identifier
http://gateway.webofknowledge.com/gateway/Gateway.cgi?GWVersion=2&SrcApp=PARTNER_APP&SrcAuth=LinksAMR&KeyUT=WOS:000515659700002&DestLinkType=FullRecord&DestApp=ALL_WOS&UsrCustomerID=1ba7043ffcc86c417c072aa74d649202
Grant Number
EP/L015579/1
Subjects
Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
IMPURITY STATES
CONDUCTIVITY
SILICON
Publication Status
Published
Article Number
ARTN 081201
Date Publish Online
2020-02-24