Requirements for a GaAsBi 1 eV sub-cell in a GaAs-based multi-junction solar cell
File(s)GaAsBi_MJSC_SST_paper_revised.pdf (713.77 KB)
Accepted version
Author(s)
Type
Journal Article
Date Issued
2015-06-22
Date Acceptance
2015-03-25
Citation
Semiconductor Science and Technology, 2015, 30
ISSN
1361-6641
Publisher
IOP Publishing
Journal / Book Title
Semiconductor Science and Technology
Volume
30
Copyright Statement
© 2015 IOP Publishing Ltd. This is an author-created, un-copyedited version of an article accepted for publication in Semiconductor Science and Technology. IOP Publishing Ltd is not responsible for any errors or omissions in this version of the manuscript or any version derived from it. The definitive publisher authenticated version is available online at http://dx.doi.org/10.1088/0268-1242/30/9/094010
Sponsor
Commission of the European Communities
European Space Agency / Estec
Imperial College London
Grant Number
283798
4000110969/14/NL/FE
Subjects
Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Materials Science, Multidisciplinary
Physics, Condensed Matter
Engineering
Materials Science
Physics
bismide
photovoltaics
solar cell
multi-junction
Applied Physics
0204 Condensed Matter Physics
0912 Materials Engineering
Publication Status
Published
Article Number
094010