Segregation of In to Dislocations in InGaN

File(s)

InGaNSegregationPaper-accepted.pdf (2.32 MB)

Accepted version

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Author(s)

Horton, MK

Rhode, S

Sahonta, S-L

Koppers, MJ

Haigh, SJ

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Type

Journal Article

Date Issued

2015-01-16

Date Acceptance

2015-01-12

Citation

Nano Letters, 2015, 15 (2), pp.923-930

URI

http://hdl.handle.net/10044/1/22157

DOI

https://www.dx.doi.org/10.1021/nl5036513

ISSN

1530-6992

Publisher

American Chemical Society

Start Page

923

End Page

930

Journal / Book Title

Nano Letters

Volume

15

Issue

2

Copyright Statement

This document is the Accepted Manuscript version of a Published Work that appeared in final form in Nano Letters, copyright © American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see http://pubs.acs.org/doi/abs/10.1021/nl5036513

License URL

http://www.rioxx.net/licenses/all-rights-reserved

Subjects

Science & Technology

Physical Sciences

Technology

Chemistry, Multidisciplinary

Chemistry, Physical

Nanoscience & Nanotechnology

Materials Science, Multidisciplinary

Physics, Applied

Physics, Condensed Matter

Chemistry

Science & Technology - Other Topics

Materials Science

Physics

Dislocations

III-nitrides

Monte Carlo

alloy segregation

atomistic modeling

STEM-EDX

LIGHT-EMITTING-DIODES

TRANSMISSION ELECTRON-MICROSCOPY

SCREW DISLOCATIONS

PHASE-SEPARATION

QUANTUM-WELLS

GAN

SEMICONDUCTORS

LOCALIZATION

PARAMETERS

ALLOYS

Publication Status

Published