Quasi two-dimensional dye-sensitized In2O3 phototransistors for ultrahigh responsivity and photosensitivity photodetector applications
File(s)
Accepted version
Author(s)
Type
Journal Article
Abstract
We report the development of dye-sensitized thin-film phototransistors consisting of an ultrathin layer (<10 nm) of indium oxide (In2O3) the surface of which is functionalized with a self-assembled monolayer of the light absorbing organic dye D102. The resulting transistors exhibit a preferential color photoresponse centered in the wavelength region of ∼500 nm with a maximum photosensitivity of ∼10(6) and a responsivity value of up to 2 × 10(3) A/W. The high photoresponse is attributed to internal signal gain and more precisely to charge carriers generated upon photoexcitation of the D102 dye which lead to the generation of free electrons in the semiconducting layer and to the high photoresponse measured. Due to the small amount of absorption of visible photons, the hybrid In2O3/D102 bilayer channel appears transparent with an average optical transmission of >92% in the wavelength range 400-700 nm. Importantly, the phototransistors are processed from solution-phase at temperatures below 200 °C hence making the technology compatible with inexpensive and temperature sensitive flexible substrate materials such as plastic.
Date Issued
2016-02-10
Date Acceptance
2016-01-28
Citation
ACS Applied Materials & Interfaces, 2016, 8 (7), pp.4894-4902
ISSN
1944-8244
Publisher
American Chemical Society
Start Page
4894
End Page
4902
Journal / Book Title
ACS Applied Materials & Interfaces
Volume
8
Issue
7
Copyright Statement
© 2016 American Chemical Society
Identifier
http://www.ncbi.nlm.nih.gov/pubmed/26863603
Subjects
indium oxide
metal oxide transistor
photodetector
photosensitivity
phototransistor
responsivity
Nanoscience & Nanotechnology
0904 Chemical Engineering
0303 Macromolecular And Materials Chemistry
0306 Physical Chemistry (Incl. Structural)
Publication Status
Published