Isotopically selected co-doping of ¹²¹Sb and ¹²³Sb pairs in silicon
Author(s)
Type
Journal Article
Abstract
A reliable route to the deterministic fabrication of impurity ion donors in silicon is required to advance quantum computing architectures based upon such systems. This paper reports the ability to dope isotopically-defined unique (¹²¹Sb¹²³Sb)²⁺ molecular ions into silicon with measured detection efficiencies of 94% being obtained. Atomically resolved imaging of the doped Sb ions reveals substitutionally incorporated atoms with a Sb-to-Sb separation of ≈2 nm post-implantation, thus indicating suitability to form coupled qudit systems. Molecular dynamics simulations support the preference for doped Sb atoms to occupy lattice sites, driven by fast (≈1s) re-crystallization of localized ion implantation induced damage at 300 K. The Sb doping method used is fully compatible with integration into processing that includes pre-enrichment of the silicon host to sub-3 ppm ²⁹Si levels. As such, we present a potential pathway to the creation of scaled qudit arrays within silicon platforms for quantum computing.
Date Issued
2026-03-25
Date Acceptance
2026-02-24
Citation
Advanced Materials, 2026, 38 (18)
ISSN
0935-9648
Publisher
Wiley
Journal / Book Title
Advanced Materials
Volume
38
Issue
18
Copyright Statement
© 2026 The Author(s). Advanced Materials published by Wiley-VCH GmbH This is an open access article under the terms of the Creative Commons Attribution License, which permits use, distribution and reproduction in any medium, provided the original work is properly cited.
License URL
Identifier
https://www.ncbi.nlm.nih.gov/pubmed/41766516
Subjects
quantum computing
qubit
qudit
Publication Status
Published
Coverage Spatial
Germany
Article Number
e22240
Date Publish Online
2026-03-02