Adiabatic perturbation theory of electronic stopping in insulators
Author(s)
Horsfield, AP
Lim, A
Foulkes, WMC
Correa, AA
Type
Journal Article
Abstract
A model able to explain the complicated structure of electronic stopping at low velocities in insulating materials is presented. It is shown to be in good agreement with results obtained from time-dependent density-functional theory for the stopping of a channeling Si atom in a Si crystal. If we define the repeat frequency f=v/λ, where λ is the periodic repeat length of the crystal along the direction the channeling atom is traveling, and v is the velocity of the channeling atom, we find that electrons experience a perturbing force that varies in time at integer multiples l of f. This enables electronic excitations at low atom velocity, but their contributions diminish rapidly with increasing values of l. The expressions for stopping power are derived using adiabatic perturbation theory for many-electron systems, and they are then specialized to the case of independent electrons. A simple model for the nonadiabatic matrix elements is described, along with the procedure for determining its parameters.
Date Issued
2016-06-15
Date Acceptance
2016-05-12
Citation
Physical Review B, 2016, 93 (24), pp.1-1
ISSN
2469-9950
Publisher
American Physical Society
Start Page
1
End Page
1
Journal / Book Title
Physical Review B
Volume
93
Issue
24
Copyright Statement
© 2016 The American Physical Society. Adiabatic perturbation theory of electronic stopping in insulators
Andrew P. Horsfield, Anthony Lim, W. M. C. Foulkes, and Alfredo A. Correa
Phys. Rev. B 93, 245106 – Published 2 June 2016
Andrew P. Horsfield, Anthony Lim, W. M. C. Foulkes, and Alfredo A. Correa
Phys. Rev. B 93, 245106 – Published 2 June 2016
Sponsor
Engineering and Physical Sciences Research Council
Grant Number
EP/G036888/1
Publication Status
Published
Article Number
245106
Date Publish Online
2016-06-02