Multifunctional semiconductor micro-Hall devices for magnetic, electric, and photo-detection
File(s)
Accepted version
Published version
Author(s)
Type
Journal Article
Abstract
We report the real-space voltage response of InSb/AlInSb micro-Hall devices to local photoexcitation,
electric, and magnetic fields at room temperature using scanning probe microscopy. We
show that the ultrafast generation of localised photocarriers results in conductance perturbations
analogous to those produced by local electric fields. Experimental results are in good agreement
with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge
sensitivity of a 2 lm wide probe are evaluated at a 10 lA bias current in the Johnson noise limit
(valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/Hz; 20 pW/Hz
(k ¼ 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/Hz comparable to
that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes
of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing
applications.
electric, and magnetic fields at room temperature using scanning probe microscopy. We
show that the ultrafast generation of localised photocarriers results in conductance perturbations
analogous to those produced by local electric fields. Experimental results are in good agreement
with tight-binding transport calculations in the diffusive regime. The magnetic, photo, and charge
sensitivity of a 2 lm wide probe are evaluated at a 10 lA bias current in the Johnson noise limit
(valid at measurement frequencies > 10 kHz) to be, respectively, 500 nT/Hz; 20 pW/Hz
(k ¼ 635 nm) comparable to commercial photoconductive detectors; and 0.05 e/Hz comparable to
that of single electron transistors. These results demonstrate the remarkably versatile sensing attributes
of simple semiconductor micro-Hall devices that can be applied to a host of imaging and sensing
applications.
Date Issued
2015-12-09
Date Acceptance
2015-11-20
Citation
Applied Physics Letters, 2015, 107 (23)
ISSN
1077-3118
Publisher
American Institute of Physics (AIP)
Journal / Book Title
Applied Physics Letters
Volume
107
Issue
23
Copyright Statement
© 2015 AIP Publishing LLC
Sponsor
Engineering & Physical Science Research Council (EPSRC)
Engineering & Physical Science Research Council (E
Engineering & Physical Science Research Council (EPSRC)
Engineering & Physical Science Research Council (EPSRC)
Grant Number
EP/E016243/1
EP/D063329/1
EP/F065922/1
EP/J014699/1
Subjects
Science & Technology
Physical Sciences
Physics, Applied
Physics
ROOM-TEMPERATURE
CONDUCTANCE
SENSORS
EDGE
INSB
Publication Status
Published
Article Number
233504