Grain bridging locations of monolithic silicon carbide by means of focused ion beam milling technique
File(s)Manuscript%20Final.docx (2.17 MB)
Accepted version
Author(s)
Nasiri, NA
Saiz, E
Giuliani, F
Vandeperre, LJ
Type
Journal Article
Abstract
A slice and view approach using a focused ion beam (FIB) milling technique was employed to investigate grain bridging near the tip of cracks in four silicon carbide (SiC) based materials with different grain boundary chemistries and grain morphologies. Using traditional observations intergranular fracture behaviour and hence clear evidence of grain bridging was found for SiC based materials sintered with oxide additives. More surprisingly, in large grain materials, the FIB technique reveals evidence of grain bridging irrespective of the grain boundary chemistry, i.e. also in materials which macroscopically fail by transgranular failure. This helps to explain why the toughness of large grained materials is higher even if failure is transgranular.
Date Issued
2016-03-14
Date Acceptance
2016-03-12
Citation
Materials Letters, 2016, 173, pp.214-218
ISSN
1873-4979
Publisher
Elsevier
Start Page
214
End Page
218
Journal / Book Title
Materials Letters
Volume
173
Copyright Statement
© 2016 The Authors. Published by Elsevier B.V. This is an open access article under the CC BY-NC-ND
license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
license (http://creativecommons.org/licenses/by-nc-nd/4.0/).
Subjects
Materials
09 Engineering
03 Chemical Sciences
Notes
publisher: Elsevier articletitle: Grain bridging locations of monolithic silicon carbide by means of focused ion beam milling technique journaltitle: Materials Letters articlelink: http://dx.doi.org/10.1016/j.matlet.2016.03.061 content_type: article copyright: Copyright © 2016 The Authors. Published by Elsevier B.V. All rights reserved.
Publication Status
Accepted