We investigate DC and AC electrical characteristics of 40 lm long p-type silicon nanowire(SiNW) arrays, prepared by metal assisted chemical etching and filled with polyacrylic acid (PAA). PAA diluted to different concentrations with deionized (DI) water is incorporated into the arrays in three steps, yielding polymer filling to the bottom of the arrays. DC and AC electrical measurements show that PAA reduces the array resistance. The AC conductivity increases up to ~1000 times, and the real part of the overall dielectric constant (e') by ~100. We attribute these effects to the formation of acceptor-like states at nanowire/polymer interface.