Transition metal dichalcogenides are inorganic layered compounds, which are characterized by van der Waals physical bonding between three-atom thick sheets. Although being employed as dry lubricants for decades, it was only after the isolation of graphene that the interest in two-dimensional layered materials reignited. In particular, group-6 transition metal dichalcogenides possess unique electronic and magnetic properties that attracted great attention for their potential application in optoelectronics. In monolayer form, transition metal dichalcogenides are direct bandgap semiconductors, making them the perfect candidate for the next generation optoelectronic devices and to continue the device miniaturization in integrated circuits. In order to implement transition metal dichalcogenides in large scale production processes, upscalable and precisely controllable synthesis processes have to be developed. Chemical vapour deposition satisfies the scale, control, and versatility requirements of the semiconductor industry, and has been widely used to grow high-quality atomically-thin crystals on several types of substrates. However, doping in transition metal dichalcogenides is yet to be fully established, and wafer-scale growth is in its infancy. Here, we describe the chemical vapour deposition growth of Zn-doped WSe2, Zn-doped MoSe2, CrS2, and WS2. We explore the growth conditions and how they influence the physical and chemical properties of the synthesized materials. The atomically-thin films are thoroughly characterized in order to shed light on their optical, electronic, and magnetic properties. In particular, we demonstrate how the Zn doping modifies the transport properties in WSe2 and how it is possible to achieve room temperature ferromagnetism in CrS2 single crystals.