Quantum Mechanical Enhancement of Random Dopant Induced Threshold Voltage Fluctuations and Lowering in Sub 0.1 micron MOSFETs

File(s)

00824210_IEDM_99.pdf (403.58 KB)

Published version

Show more

Author(s)

Asenov, A

Slavcheva, G

Brown, AR

Davies, JH

Saini, S

Type

Journal Article

Version

Published version

Date Issued

1999

Citation

Electron Devices Meeting, 1999. IEDM Technical Digest. International, 1999, pp.535-558

URI

http://hdl.handle.net/10044/1/5783

URL

http://dx.doi.org/10.1109/IEDM.1999.824210

Start Page

535

End Page

558

Journal / Book Title

Electron Devices Meeting, 1999. IEDM Technical Digest. International

Copyright Statement

© 1999 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for all other users, including reprinting/ republishing this material for advertising or promotional purposes, creating new collective works for resale or redistribution to servers or lists, or reuse of any copyrighted components of this work in other works.

License URL

http://www.rioxx.net/licenses/all-rights-reserved

Publication Status

Published

Article Number

535